FDMC86012 datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Max RDS(on) = 2.7 mW at VGS = 4.5 V, ID = 23 A
* Max RDS(on) = 4.7 mW at VGS = 2.5 V, ID = 17.5 A
* High Performance Technology for Extremely low RDS(on)

Application

* 3.3 V Input Synchronous Buck Switch
* Synchronous Rectifier MAXIMUM RATINGS (TA = 25°C unless otherwise noted.

Description

This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resi.

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